- patented trench schottky technology - excellent high temperature stability - low forward voltage - lower power loss/ high efficiency - high forward surge capability - ideal for automated placement - halogen-free according to iec 61249-2-21 definition molding compound meets ul 94 v-0 flammability rating packing code with suffix "g" means green compound (halogen-free) terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 1a whisker test symbol unit v rrm v i f(av) a i f = 10a i f = 20a i f = 10a i f = 20a t j = 25c a t j = 125c ma r jl c/w t j c t stg c note 1: pulse test with pulse width = 300 s, 1% duty cycle document number: ds_d1410098 version: e15 a v f v instantaneous forward voltage (note 1) t j = 125c - - min typ storage temperature range - 55 to +150 typical thermal resistance 7 operating junction temperature range maximum repetitive peak reverse voltage t j = 25c max maximum dc forward current 20 TSN520M60 pdfn56 polarity: as marked weight: 0.096g (approximately) 60 200 marking code peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load i fsm 20a, 60v trench schottky rectifier TSN520M60 taiwan semiconductor features mechanical data moisture sensitivity level: level 1, per j-std-020 - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec 0.42 0.52 -- - instantaneous reverse current at rated reverse voltage 0.58 - 55 to +150 520m60 i r 500 - - - 100 - 0.43 0.33 -0.48 typical applications trench schottky barrier rectifier are designed for high frequency miniature switched mode power supplies such as adapters, lighting and on-board dc/dc converters. case: pdfn56 maximum ratings and electrical characteristics (t a = 25c unless otherwise noted) parameter a k
(t a = 25c unless otherwise noted) document number: ds_d1410098 version: e15 order information (example) TSN520M60 taiwan semiconductor ratings and characteristics curves 0.001 0.01 0.1 1 10 100 1000 10 20 30 40 50 60 70 80 90 100 t j =25 o c t j =100 o c t j =125 o c t j =150 o c instantaneous reverse current (ma) percent of rated peak reverse voltage (%) fig. 3 typical reverse characteristics 100 1000 10000 0.1 1 10 100 f=1.0mhz v sig =50mv p-p capacitance (pf) fig. 4 typical junction capacitance reverse voltage (v) 0.01 0.1 1 10 100 0 0.1 0.2 0.3 0.4 0.5 0.6 t j =25 o c fig. 2 typical forward characteristics t j =100 o c t j =125 o c t j =150 o c instantaneous forward current (a) forward voltage (v) 0 5 10 15 20 25 30 0 25 50 75 100 125 150 with heatsink 30mm x 30mm al substrate pcb fig.1 forward current derating curve average forward current (a) lead temperature ( o c) TSN520M60 s3g green compound ? code packing ? code part ? no.
pdfn56 min max min max a 6.00 6.40 0.236 0.252 b 5.55 5.85 0.219 0.230 c 0.25 0.55 0.010 0.022 d 5.05 5.35 0.199 0.211 e 4.06 4.36 0.160 0.172 f 3.25 3.55 0.128 0.140 g 3.90 4.20 0.154 0.165 h 0.30 0.60 0.012 0.024 i j 0.10 0.40 0.004 0.016 k 0.95 1.25 0.037 0.049 p/n = marking code yw = date code f = factory code document number: ds_d1410098 version: e15 g 0.71 0.028 unit (inch) unit (mm) symbol f 0.82 0.032 d 1.27 0.050 e 0.60 0.024 0.178 b 4.52 0.178 c 1.27 0.050 TSN520M60 taiwan semiconductor package outline dimensions suggest pad layout marking diagram 3.81 typ. 0.15 typ. dim. unit (mm) unit (inch) a4.52 tsc p/n ywf
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